All-optical devices based on:
Photonic Bandgap Materials;
Nonlinear Optics;
Parity time Symmetry;
Avalanche Photo Diodes;
Nanostructured Devices;
Nanophotonics,
Nanoelectronics
Courses Taught:
Applied Quantum Mechanics
III-V Compound Semiconductor Devices
Microelectronic Fabrication Technology
Quantum Transport
Semiconductor Electron and Optoelectronic Devices
Publications in Peer Reviewed Journals
2014
Electronic and Transport Properties of Monolayer Graphene Defected By One and Two Carbon Ad-Dimers, S. Fotoohi, M. K. Moravvej-Farshi, R. Faez, Applied Physics A, In Press, 2014.
Role of 3D-Paired Pentagon–Heptagon Defects in Electronic and Transport Properties of Zigzag Graphene Nanoribbons, S. Fotoohi, M. K. Moravvej-Farshi, R. Faez, Applied Physics A, In Press, 2014.
Effect of Crystallization on Soft Magnetic Properties of Nanocrystalline Fe80B10Si8Nb1Cu1 Alloy, F. Hosseini-Nasb, A. Beitollahi, M. K. Moravvej-Farshi, Journal of Magnetism and Magnetic Materials, In Press 2014.
Photodetectors with Armchair Graphene Nanoribbons and Asymmetric Source and Drain Contacts, F. Ostovari, M. K. Moravvej-Farshi, Applied Surface Science, In Press, 2014
Optical Isolation Via PT-Symmetric Nonlinear Fano Resonances, F. Nazari, N. Bender, H. Ramezani M. K. Moravvej-Farshi, D. N. Christodoulides, T. Kottos, Optics Express, Vol. 22, No. 8, pp. 9574-9584, 2014.
Proposal For Supercontinuum Generation by Optofluidic Infiltrated Photonic Crystal Fibers, M. Ebnali-Heidari, H. Saghaei, F. Koohi-Kamali, M. N. Moghadasi, M. K. Moravvej-Farshi, IEEE Journal of Selected Topics In Quantum Electronics, Vol. 20, No 5, 2014.
Design and Analysis of Slow Light Regime In Silicon Carbide 2D Photonic Crystal Waveguides, E Pourali, M. K. Moravvej-Farshi, M Ebnali-Heidari, Infrared Physics & Technology, Vol.63 C, pp. 10-16, 2014.
The effect of quenching rate on structure and soft magnetic properties of high Bs Fe-based nanocrystalline alloys, F. Hosseini-Nasb, A. Beitollahi, and M. K. Moravvej-Farshi, Advanced Materials Research, Vol. 829, pp. 78-81, 2014.
2013
A Novel Graphene Nano-Ribbon Field Effect Transistor with Schottky Tunneling Drain and Ohmic Tunneling Source, S.S. GHOREISHI, K. SAGHAFI, AND M. K. MOARVVEJ-FARSHI, MODERN PHYS LETTS. B, VOL. 27, ISSUE 26, PP. 1350189-1-10, 2013.
Asymmetric Evolution of Interacting Solitons in Parity Time Symmetric Cells, f. nAZARI, M. NAZARI, AND mk MORAVVEJ-FARSHI, iEEE J. QUANTUM ELECTRONICS, VOL. 49, NO. 11, PP. 932-938, 2013.
Effect of temperature on the current-voltage characteristics of GaAs/AlGaAs quantum cascade photodetectors, n. HATEFI-KARGAN, AND M. K. MORAVVEJ-FARSHI, PHYSICA E, VOL. 54, PP. 336-340, 2013.
Fabrication of highly sensitive field emission based pressure sensor, using CNTs grown on micro-machined substrate, N. Doostani, S. Darbari, S. Mohajerzade, and M.K. Moravvej Farshi; Sensors & Actuators: A. Physical, VOL. 201, PP.310-315, 2013.
PHOTONICS CRYSTALS BASED ON PERIODIC ARRAYS OF MWCNTs: MODELING AND SIMULATION, Y. SHAMSOLLAHI, M.K. MORAVVEJ FARSHI, ANDM. EBNALI-HEIDARI, J. Lightwave Technol. Vol. 31, No. 12, pp. 1946-53, 2013.
DESIGN AND SIMULATION OF MOSCNT WITH BAND ENGINEERED SOURCE AND DRAIN REGIONS; N. MOGHADAM, M.K. MORAVVEJ-FARSHI, M.R. AZIZYAN; MICROELECTRONICS RELIABILITY , Vol. 53, pp.533-539, 2013.
STABILTY ANALYSIS IN CNTFETS, S. HAJI-NASIRI, AND M.K. MORAVVEJ FARSHI; IEEE ELECTRON DEVICE LETTERS 34, PP. 301-303, 2013
2012
Internal photoemission based photodetector on si micro ring resonator, A. Rasoulzadeh Zali,M.K. MORAVVEJ-FARSHI, G. Abaeiani, Optics Letters 37 (23), pp. (2012).
DYNAMIC BEHAVIOR OF SPATIAL SOLITONS PROPAGATING ALONG SCARF II PARITY-TIME SYMMETRIC CELLS, M. NAZARI, F. NAZARI, AND M.K. MORAVVEJ FARSHI; J OPTICAL SOCIETY OF AMERICA B 29 (11), pp. 3057-62 (2012).
DISPERSION ENGINEERING OF PHOTONIC CRYSTAL FIBERS BY MEANS OF FLUIDIC INFILTRATION, M EBNALI-HEIDARI, F. DEHGHAN, H. SAGHAEI, F. KOOHI KAMALI, AND M.K. MORAVVEJ FARSHI; J MODERN OPTICS (16), pp. 1384-90 (2012).
STABILITY ANALYSIS MAULTIWALL CARBON NANOTUBE BUNDEL INTERCONNECTS, S. JAJI-NASIRI, R. FAEZ, AND M.K. MORAVVEJ FARSHI; MICROELECTRONICS RELIABILITY 52 (12), pp.3026-34 (2012).
ELECRONIC PROPERTIES OF A DUAL-GATED GNR FET UNDER UNIAXIAL TENSILE STRAIN, M. R. MOSLEMI, M.H. SHEIKI, K. SAGHAFI, AND M.K. MORAVVEJ FARSHI; MICROELECTRONICS RELIABILITY 52 (11), pp. 2579-84 (2012).
TEMPERATURE DEPENDENCE OF ELECTRICAL RESISTANCE OF INDIVIDUAL CARBON NANOTUBES NEWORKS, S. DEHGHANI, M.K. MORAVVEJ-FARSHI, AND M. H. SHEIKHI, MODERN PHYS LTT. B 26 (21), pp. 1250136-1-13 (2012).
DESIGN AND NUMERICAL SIMULATION OF AN OPTOFLUIDIC PRESSURE SENSOR; M. EBNALI-HEIDARI, M. MANSURI, S. MOKHTARIAN, AND M.K. MORAVVEJ FARSHI; APPLIED OPTICS 51 (15), pp. 3387-96 (2012).
DESIGN OF ULTRA-COMPACT LOW POWER ALL-OPTICAL MODULATOR BY MEANS OF DISPERSION ENGINEERED SLOW LIGHT REGIME IN PHOTONIC CRYSTAL MACH-ZEHNDER, BAKHSHI, S;MORAVVEJ-FARSHI, MK;EBNALI-HEYDARI, M; APPLIED OPTICS 51 (14), PP. 2687-2692 (2012).
TWO BIT ALL-OPTICAL ANALOG-TO-DIGITAL CONVERTER BASED ON NONLINEAR KERR EFFECT IN 2D PHOTONIC CRYSTALS, YOUSSEFI, V; MORAVVEJ-FARSHI, MK;GRANPAYEH, N; OPTICS COMMUNICATION 285, PP. 3228-3233 (2012).
TIME DOMAIN ANALYSIS OF GRAPHENE NANORIBBON INTERCONNECTS BASED ON TRANSMISSION LINE MODEL, NASIRI, S H; MORAVVEJ-FARSHI, MK;EBNALI-HEIDARI, M; AND FAEZ, R; IRANIAN J ELECTRICAL & ELECTRONICS ENGINEERING (IJEEE), VOL. 8, NO. 1, PP. 37-44 (2012).
COMPACT FORMULAE FOR NUMBER OF CONDUCTING CHANNELS IN VARIOUS TYPES OF GRAPHENE NANORIBBONS AT VARIOUS TEMPERATURES, NASIRI, S H; FAEZ, R, MORAVVEJ-FARSHI, MK; MODERN PHYSICS LETTERS B (MPLB) 26, (1), PP. 1150004.1-1150004-5 (2012).
2011
A 2×2 Spatial Optical Switch Based On PT-Symmetry, Nazari, F, Nazari, Mina, and Moravvej-Farshi, MK,Optics Letters 36 (22), pp.4368-4370, (2011).
Numerical Investigation on the Temperature dependence of the Cylindrical-Gate-All-Around Si-NW-FET, Sedigh, A; Saghafi, K, Faez, R, Moravvej-Farshi, MK; Modern Physics LettersB (MPLB)25 (29) pp.2269-2278(2011).
Proposal For Enhancing the Transmission Efficiency of Photonic Crystal 60° Waveguide Bends By Means of Optofluidic Infiltration, Bakhshi, S; Moravvej-Farshi, MK; Ebnali-Heydari, M; Applied Optics 50., Issue21, pp.4048-4053 (2011).
Triple-Tunnel Junction Single Electron Transistor(TTJ-SET); Shahhoseini, A; Saghafi, K; Moravvej-Farshi, MK; Faez, R; Modern Physics Letters B (MPLB) 25 (17, pp.1487–1501, pp.2622-2627, 2011.
Band Structures For 2d Photonic Crystals In Presence of Nonlinear Kerr Effect Calculated by Use of Nonlinear Finite Difference Time Domain (NFDTD) Method; Khodabakhsh, A; Moravvej-Farshi, MK; Ebnali-Heidari, M; Iranian J Electrical & Electronics Engineering (IJEEE) 7 (2), pp.122-130, (2011).
Proposal For Post-Fabrication Fine-Tuning of Photonic Crystal Channel Drop Filters (Phc-Cdf) By Means of Optofluidic Infiltration; Bitarafan, MH; Moravvej-Farshi, MK; Ebnali-Heydari, M; APPLIED OPTICS 50 (17), pp.2622-2627, (2011).
Design Optimization For 4.1 Thz Quantum Cascade Lasers; Esmaeilifard, F; Moravvej-Farshi, MK;Saghafi, K; Iranian J Electrical & Electronics Engineering (IJEEE) 7 (1), pp.28-32, (2011).
Dynamics of Onf-Based Three-Qd Nanophotonic and Gates At Finite Temperatures; Karimkhani, A; Moravvej-Farshi, MK;IEEE J Quantum Electronics47 (2), pp.230-237, (2011).
Mode Analysis of 2d Photonic Quasicrystals Based On An Approximate Analytic Model; Rostami, A; Matloub, S; Moravvej-Farshi, MK;Photonics and Nanostructures-Fundamentals and Applications 9 (1), pp.22-30, (2011).
2010
Stability Analysis in Graphene Nanoribbon Interconnects;Nasiri, SH; Moravvej-Farshi, MK; Faez, R, IEEE ELECTRON DEVICE LETTERS, Vol. 31, No. 12, pp. 1458-1460, 2010.
An Equivalent Lumped Circuit Model for Thin Avalanche Photodiodes With Nonuniform Electric Field Profile;Jalali, M; Moravvej-Farshi, MK; Masudy-Panah, S; Nabavi, A, J LIGHTWAVE TECHNOLOGY, Vol. 28, No. 23, pp. 3395-3402, 2010.
Realization of wavelength conversion with hyperbolic secant femtosecond pulse in normal dispersion regime;Esmaeilian-Marnani, A; Abas, AF; Moravvej-Farshi, MK; Ebnali-Heidari, M, J MODERN OPTICS, Vol. 57, No. 8, pp. 601-606, 2010.
QUANTUM DOT GEOMETRY AS A DESIGNING TOOL FOR DOT-IN-A-WELL STRUCTURES, Batenipour, N; Saghafi, K; Moravvej-Farshi, MK; MODERN PHYSICS LETTERS B, Vol. 24, No. 15, pp. 1675-1689, 2010.
Application of Neural Space Mapping for Modeling Ballistic Carbon Nanotube Transistors; Yousefi, R; Saghafi, K; Moravvej-Farshi, MK; Iranian J Electrical & Electronics Engineering (IJEEE), Vol. 6, pp. 70-76 2010.
Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors, Yousefi, R; Saghafi, K; Moravvej-Farshi, MK; IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 57, No. 4, pp. 765-771. 2010.
An Analytic Approach to Study the Effects of Optical Phonon Scattering Loss on the Characteristics of Avalanche Photodiodes; Masudy-Panah, S; Moravvej-Farshi, MK; IEEE J QUANTUM ELECTRONICS, Vol. 46, No. 4, pp. 533-540, 2010.
Temperature dependence of optical near-field energy transfer rate between two quantum dots in nanophotonic devices; Karimkhani, A; Moravvej-Farshi, MK; APPLIED OPTICS, Vol. 49, No. 6, pp. 1012-1019, 2010.
Compact all-optical tunable filter with embedded preamplifier and channel selector based on cross-Raman scattering in an Si nanowire waveguide; Abdollahi, S; Moravvej-Farshi, MK; OPTICS LETTERS, Vol. 35, No. 1, pp. 61-63, 2010.
2009
An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors; Shahhoseini, A; Saghafi, K; Moravvej-Farshi, MK; Faez, R;Iranian J Electrical & Electronics Engineering (IJEEE), Vol. 5, No. 4, pp. 234-243, 2009.
Optical and microwave analysis of mushroom-type waveguides for traveling wave electroabsorption modulators based on asymmetric intra-step-barrier coupled double strained quantum wells by full-vectorial method; Abedi, K; Ahmadi, V; Moravvej-Farshi, MK; OPTICAL AND QUANTUM ELECTRONICS, Vol. 41, 10, No. pp. 719-733, 2009.
Cross-phase modulation response of a DCC-DFB-SOA all-optical flip-flop; Jabbari, M; Moravvej-Farshi, MK; Ghayour, R; Zarifkar, A, JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, Vol. 26, No. 9, pp. 1720-1727, 2009.
A proposal for enhancing four-wave mixing in slow light engineered photonic crystal waveguides and its application to optical regeneration;Ebnali-Heidari, M; Monat, C; Grillet, C; Moravvej-Farshi, MK; OPTICS EXPRESS, Vol. 17, No. 20, pp. 18340-18353, 2009.
Swing effect of spatial solitons propagating through Gaussian and triangular waveguides; Ebnali-Heidari, M; Moravvej-Farshi, MK; Zarifkar, A, APPLIED OPTICS, Vol. 48, No. 26, pp. 5005-5014, 2009.
Temperature dependent characteristics of submicron GaAs avalanche photodiodes obtained by a nonlocal analysisMasudy-Panah, S; Moravvej-Farshi, MK; Jalali, M, OPTICS COMMUNICATIONS, Vol. 282, No. 17, pp. 3630-3636, 2009.
XPM Response of a Chirped DFB-SOA All-Optical Flip-Flop Injected With an Assist Light at Transparency; Jabbari, M; Moravvej-Farshi, MK; Ghayour, R; Zarifkar, A, J LIGHTWAVE TECHNOLOGY, Vol. 27, No. 13, pp. 2199-2207, 2009.
Design of three-input nanophotonic AND gates; Karimkhani, A; Moravvej-Farshi, MK; J THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, Vol. 26, No. 5, pp. 1084-1090, 2009.
Effects of heat induced by two-photon absorption and free-carrier absorption in silicon-on-insulator nanowaveguides operating as all-optical wavelength converters; Abdollahi, S; Moravvej-Farshi, MK; APPLIED OPTICS, Vol. 48, No. 13, pp. 2505-2514-2009.
Non-local impact ionisation coefficients of submicron In0.52Al0.48As avalanche photodiodes; Masudy-Panah, S; Moravvej-Farshi, MK; INTERNATIONAL Journal of ELECTRONICS, Vol. 96, No. 4, pp. 437-444, 2009.
An Equivalent Circuit Model for Analyzing Separate Confinement Heterostructure Quantum Well Laser Diodes Including Chirp and Carrier Transport Effects; Zarifkar, A; Ansari, L; Moravvej-Farshi, MK; FIBER AND INTEGRATED OPTICS, Vol. 28, No. 4, pp. 249-267, 2009.
Switching Behavior of Bistable DFB Semiconductor Laser Amplifiers; Aleshams, M; Moravvej-Farshi, MK; Sheikhi, MH, FIBER AND INTEGRATED OPTICS, Vol. 28, No. 4, pp. 275-287, 2009.
2008
Precompensation Techniques to Suppress the Thermally Induced Wavelength Drift in Tunable DBR Lasers; Darvish, G; Moravvej-Farshi, MK; Zarifkar, A; Saghafi, K, IEEE J QUANTUM ELECTRONICS, Vol. 44, No. 9-10, pp. 958-965, 2008.
Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled gm-boosting scheme; Jalali, M; Nabavi, A; Moravvej-Farshi, MK; Fotowat-Ahmady, A, MICROELECTRONICS JOURNAL, Vol.39, No. 12, pp. 1843-1851, 2008.
Dense wavelength-division multiplexing dispersion compensators based on chirped and apodized Fibonacci structures: CA-FC(j, n), Golmohammadi, S; Moravvej-Farshi, MK; Rostami, A; Zarifkar, A, APPLIED OPTICS, Vol. 47, No. 35, pp. 6477-6487, 2008.
A simple empirical model for calculating gain and excess noise inGaAs/AlxGa1−xAs APDs (0.3≤x ≤0.6); Soroosh, M; Moravvej-Farshi, MK; Saghafi, K; IEICE ELECTRONICS EXPRESS, Vol. 5, No. 20, pp. 853-859, 2008.
Dense wavelength-division multiplexing dispersion compensators based on chirped and apodized Fibonacci structures: CA-FC(j, n); Golmohammadi, S; Moravvej-Farshi, MK; Rostami, A; Zarifkar, A; APPLIED OPTICS,
Low-noise differential transimpedance amplifier structure based on capacitor cross-coupledgm-boosting scheme; Jalali, M; Nabavi, A; Moravvej-Farshi, MK; Fotowat-Ahmady;MICROELECTRONICS JOURNAL, Vol. 39, No. 12, pp. 1843-1851, 2008
Precompensation Techniques to Suppress the Thermally Induced Wavelength Drift in Tunable DBR Lasers; Darvish, G; Moravvej-Farshi, MK; Zarifkar, A; Saghafi, K; IEEE J QUANTUM ELECTRONICS, Vol. 44, No 9-10, pp.958-965, 2008.
Narrowband optical filters suitable for various applications in optical communications; Darvish, G; Moravvej-Farshi, MK; Zarifkar, A; Saghafi, K; APPLIED OPTICS, Vol. 47, No. 28, pp. 5140-5146, 2008.
Ultrafast low-threshold all-optical switch implemented by arrays of ring resonators coupled to a Mach-Zehnder interferometer arm: based on 2D photonic crystals; Mansouri-Birjandi, MA; Moravvej-Farshi, MK; Rostami, A; APPLIED OPTICS, Vol. 47, No. 27, pp. 5041-5050 2008.
Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55µm; Abedi, K; Ahmadi, V; Darabi, E; Moravvej-Farshi, MK; Sheikhi, MH; SOLID-STATE ELECTRONICS, Vol. 52, No. 2, pp. 312-322, 2008.
Tapered grating effects on static properties of a bistable QWS-DFB semiconductor laser amplifier; Aleshams, M; Moravvej-Farshi, MK; Sheikhi, MH; SOLID-STATE ELECTRONICS, Vol. 52, No. 1, pp. 156-163, 2008.
2007 and Before
Gm-boosted differential transimpedance amplifier architecture; Jalali, M; Moravvej-Farshi, MK; Nabavi, A; Fotowat-Ahmady, A; IEICE ELECTRONICS EXPRESS, Vol. 4, No. 16, pp. 498-503, 2007.
Narrowband DWDM filters based on Fibonacci-class quasi-periodic structures; Golmohammadi, S; Moravvej-Farshi, MK; Rostami, A; Zarifkar, A; OPTICS EXPRESS, Vol. 15, No. 17, pp. 10520-10532, 2007.
Multichannel wavelength conversion using fourth-order soliton decay; Ebnali-Heidari, M; Moravvej-Farshi, MK; Zarifkar, A; J LIGHTWAVE TECHNOLOGY, Vol. 25, No. 9, pp. 2571-2578, 2007
Spectral analysis of the Fibonacci-class one-dimensional quasi-periodic structures; Golmohammadi, S; Moravvej-Farshi, MK; Rostami, A; Zarifkar, A; PROGRESS IN ELECTROMAGNETICS RESEARCH-PIER, Vol. 75, pp. 69-84, 2007.
A new model for optical communication systems; Mortazy, E; Moravvej-Farshi, MK; OPTICAL FIBER TECHNOLOGY, Vol. 11, No. 1, pp. 69-80, 2005.
Analysis and design of a dye-doped polymer optical fiber amplifier; Karimi, M; Granpayeh, N; Moravvej-Farshi, MK; APPLIED PHYSICS B-LASERS AND OPTICS, Vol; 78, No. 6, p. 797 (Errata), 2004; Vol. 78, No. 3-4, pp. 387-396, 2004.
A physical model for characteristics of an optical amplifier-switch integrated device; Sheikhi, MH; Ahmadi, V; Moravvej-Farshi, MK; IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY, Vol. 26, No. B4, pp. 665-672, 2002.
An integrated equivalent circuit model for relative intensity noise and frequency noise spectrum of a multimode semiconductor laser; Mortazy, E; Ahmadi, V; Moravvej-Farshi, MK; IEEE J QUANTUM ELECTRONICS, Vol. 38, No. 10, pp. 1366-1371, 2002.
Numerical analysis for static and dynamic characteristics of an optical amplifier-switch integrated device; Ahmadi, V; Sheikhi, MH; Moravvej-Farshi, MK; SCRIPTA MATERIALIA, Vol. 44, No. 8-9, pp. 1207-1212, 2001.
Effects of Doping and Alloy Composition on Electron Transport in SubmicronGaAs/AlGaAs MESFETs: A Monte Carlo Simulation; Saghafi, K; Moravvej-Farshi, MK; Scientia Iranica, Vol. 7, No 4, Nov. 2000.
Ensemble Monte Carlo Simulation ofn+-i-n+GaAs Diode; Moravvej-Farshi, MK; Saghafi, K; Scientia Iranica, Vol. 6, No. 1, Feb. 1999.
Characteristics of p-TypeAlAs/GaAs Bragg Mirrors Grown by MBE on (100) and (311)A Oriented Substrates; Moravvej-Farshi, MK; International Journal of Engineering, Vol. 11, No. 1, pp. 15-20, 1998.
Effects of δ-Doping on Characteristics of AlAs/GaAs Barriers Grown by MBE at 400 °C; Moravvej-Farshi, MK; International Journal of Engineering, Vol. 9, No. 1, pp. 1-9, 1996.
High Temperature Lifetesting of Silicon Metal-Thin Insulator-Semiconductor Heterojunction Emitter Bipolar Transistors; Guo, WL; Moravvej-Farshi, MK; Green, MA; Solid State Electron., Vol. 31, No. 6, pp. 1071-1075, (988.
Novel Self-Aligned Polysilicon-Gate MOSFETs with Polysilicon Source and Drain; Moravvej-Farshi, MK; Green, MA;Solid State Electron., Vol. 30, No. 9, pp. 1053-1054, 1987.
Effects of Interfacial Oxide Layer on Short-Channel Polycrystalline Source and Drain MOSFETs;Moravvej-Farshi, MK; Green, MA; IEEE Electron Device Lett., Vol. EDL-8, No. 4, pp. 165-167, 1987.
Improvements in Current Gain and Breakdown Voltage of Si MIS Heterojunction Emitter Transistors; Moravvej-Farshi, MK; Guo, WL; Green; MAIEEE Electron Device Lett., Vol. EDL-7, No. 11, pp. 632-634, 1986.
Operational Silicon Bipolar Inversion-Channel Field Effect Transistor (BICFET);Moravvej-Farshi, MK; Green, MA; IEEE Electron Device Lett., Vol. EDL-7, No. 9, pp. 513-515, 1986.
Novel NMOS Transistor with Near-Zero Depth Conductor/Thin Insulator/Semiconductor (CIS) Source and Drain Junctions; Moravvej-Farshi, MK; M. A. Green; IEEE Electron Device Lett., Vol. EDL-7, No. 8, pp. 474-476, 1986.
Thermal Diffusion of Tin in GaAs from Tin-Silica film with RF-SputteredSiO2 Cap; Kalkur, TS; Moravvej-Farshi, MK; Nassibian, AG; J. Phys. D: Appl. Phys. D, 17, L115-L117, 1984.
